Suitable for high-efficiency cell technologies such as PERC, PERT, TOPCon, XBC, HJT, Perovskite, Tandem-Cell, etc
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Thin films including Al₂O₃, SiO₂, TiO₂, ZnO, SnO₂, HfO₂, ZrO₂, etc. can be prepared
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The maximum loading capacity of a single chamber is up to 3360 wafers/batch, compatible with M10-M12 wafer sizes, and easy to upgrade and switch
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Accurately realizes atomic-level film thickness control (1-10 nm, adjustable) with excellent film thickness uniformity
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Individually operated reaction chambers ensure maximized plant uptime (>99%)
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Provides customized complex nano-stacking processes as well as CVD compatibility
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